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The company to break through and provide silicon carbide and high brightness LED manufacturing technology

Date:2016-01-18 15:30

Recently, the company's R & D department and the Japanese LED expert team cooperation in Japan's R & D base, through technical research and development, has now been broken and can provide a full set of solutions for silicon carbide and high brightness LED manufacturing. Phase compared with the existing LED substrate material in the mainstream -- sapphire thermal poor conductor, silicon carbide substrate in the heat conduction performance, than the sapphire substrate higher more than 10 times, so the use of LED elements made of silicon carbide substrate with good electrical and thermal conductivity, relative to made of high power LED components. Produced by the use of silicon carbide substrate LED grain, the electrode is L-shaped, with two electrodes are distributed on the surface and the bottom of the LED element, the heat generated can be through the electrode directly shed, not only that, silicon carbide substrate without a current diffusion layer. Therefore, light will not is current diffusion layer of absorbing material, is helpful to improve the light output rate.

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